A polymer blend approach to fabricating the hole transport layer for polymer light-emitting diodes
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Abstract
This contribution describes an approach to fabricating high-efficiency hole-transport layers (HTLs) for polymer light-emitting diodes (PLEDs). HTLs fabricated by this approach have two components: a siloxane-derivatized, crosslinkable, hole-transporting material and a hole-transporting polymer. These HTLs exhibit high transparency, have no corrosive effects on the indium tin oxide anode, and have minimal pixel cross-talk potential. PLEDs that are fabricated using these HTLs exhibit superior performance (40% greater maximum current efficiency) versus analogous devices using a conventional poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) HTL. Most importantly, this approach has considerable flexibility and can be applied as a general strategy to manipulate energy level alignments in PLEDs. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A polymer blend approach to fabricating the hole transport layer for polymer light-emitting diodes</title><author><name sortKey="Yan, He" uniqKey="Yan H">He Yan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208-3113</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Chemistry and the Materials Research Center, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Huang, Qinglan" uniqKey="Huang Q">Qinglan Huang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208-3113</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Chemistry and the Materials Research Center, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Scott, Brian J" uniqKey="Scott B">Brian J. Scott</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208-3113</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Chemistry and the Materials Research Center, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Marks, Tobin J" uniqKey="Marks T">Tobin J. Marks</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208-3113</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Chemistry and the Materials Research Center, Northwestern University, Evanston</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0197900</idno><date when="2004-05-10">2004-05-10</date><idno type="stanalyst">PASCAL 04-0197900 AIP</idno><idno type="RBID">Pascal:04-0197900</idno><idno type="wicri:Area/Main/Corpus">00B941</idno><idno type="wicri:Area/Main/Repository">00A481</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Hole mobility</term><term>Optical fabrication</term><term>Optical polymers</term><term>Organic light emitting diodes</term><term>Polymer blends</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560J</term><term>4270J</term><term>4286</term><term>7220F</term><term>Etude expérimentale</term><term>Diode électroluminescente organique</term><term>Mobilité trou</term><term>Mélange polymère</term><term>Polymère optique</term><term>Fabrication optique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This contribution describes an approach to fabricating high-efficiency hole-transport layers (HTLs) for polymer light-emitting diodes (PLEDs). HTLs fabricated by this approach have two components: a siloxane-derivatized, crosslinkable, hole-transporting material and a hole-transporting polymer. These HTLs exhibit high transparency, have no corrosive effects on the indium tin oxide anode, and have minimal pixel cross-talk potential. PLEDs that are fabricated using these HTLs exhibit superior performance (40% greater maximum current efficiency) versus analogous devices using a conventional poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) HTL. Most importantly, this approach has considerable flexibility and can be applied as a general strategy to manipulate energy level alignments in PLEDs. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>19</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>A polymer blend approach to fabricating the hole transport layer for polymer light-emitting diodes</s1></fA08><fA11 i1="01" i2="1"><s1>YAN (He)</s1></fA11><fA11 i1="02" i2="1"><s1>HUANG (Qinglan)</s1></fA11><fA11 i1="03" i2="1"><s1>SCOTT (Brian J.)</s1></fA11><fA11 i1="04" i2="1"><s1>MARKS (Tobin J.)</s1></fA11><fA14 i1="01"><s1>Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208-3113</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>3873-3875</s1></fA20><fA21><s1>2004-05-10</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0197900</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>This contribution describes an approach to fabricating high-efficiency hole-transport layers (HTLs) for polymer light-emitting diodes (PLEDs). HTLs fabricated by this approach have two components: a siloxane-derivatized, crosslinkable, hole-transporting material and a hole-transporting polymer. These HTLs exhibit high transparency, have no corrosive effects on the indium tin oxide anode, and have minimal pixel cross-talk potential. PLEDs that are fabricated using these HTLs exhibit superior performance (40% greater maximum current efficiency) versus analogous devices using a conventional poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) HTL. 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